A novel directed vapor deposition (DVD) process for creating amorphous and polycrystalline electronic materials is reported. Initial experimental results for DVD of nonhydrogenated a-Si indicate that growth rates at least between 0.02 and 1.0 um.min can be achieved. In this process, evaporated silicon is efficiently entrained in a previously formed low pressure supersonic He jet. The silicon is evaporated using a high energy, high voltage electron beam. The collimated jet of He entrained with silicon is used to deposit thin films of a-Si at room-temperature on glass substrates. Initial TEM microstructure analysis and optical absorption analysis is presented.