A directed vapor deposition system has been developed and used for nonhydrogenated a-Si and Cu deposits. Both materials created using DVD show promising electronic material properties. The a-Si specimens were deposited at high rates and showed signs of microcrystalline structure even though deposition occurred at room temperature. Cu deposition results demonstrate the ability of substrate heating to improve film quality. Still, the microstructure and morphology of DVD Cu ws different than predicted by the traditional structure zone model suggesting that a modified structure zone model should be developed for this system. The Cu results also suggest that variation of carrier gas momentum combined with limited substrate heating could lead to further Cu film quality improvements and possibly polycrystalline Si deposits at reduced temperatures.